Si基JBS整流二极管的设计与制备

Design and Fabrication of Si-Based Junction-Barrier-Schottky Rectifier Diode

基于JBS整流二极管理论,详细介绍了一种Si基JBS整流二极管设计方法、制备工艺及测试结果。在传统肖特基二极管(SBD)有源区,利用光刻和固态源扩散工艺形成掺硼的蜂窝状结构,与n型衬底形成pn结,反向偏置时抑制了因电压增加引起的金属-半导体势垒高度降低,减小了漏电流;采用离子注入形成两道场限环的终端结构,有效防止了边缘击穿,提高了反向击穿电压。对制备的器件使用Tektronix 370B可编程特性曲线图示仪进行了I-V特性测试,结果表明本文设计的Si基JBS整流二极管正向压降VF=0.78 V(正向电流IF=5 A时),反向击穿电压可达340 V。

The detailed design, fabrication and test results of the JBS diode were presented. Using lithography and solid source diffusion in the fabrication process, a p ~ honeycomb structure was formed in the active region of the traditional power SBD, which formed pn junction with n-type substrate. When the JBS diode is in reverse state, the Schottky contact will pinch-off which can effectively prevent lowering of metal-semiconductor barrier and reduce leakage current. Using the ion implantation, the double field limiting rings （FLR） terminal structure was formed, which effectively prevented the breakdown of edge and increased reverse breakdown voltage. The I-V characteristics of the JBS rectifier diode were tested by Tektronix 370B programmable graphic instrument. The results show that the forward voltage （VF） is0.78 V @ IF= 5 A and reverse break voltage （BV） can reach 340 V.