摘要
基于T型衰减网络结构设计并仿真了工作频率为DC^3GHz的微波薄膜衰减器,并采用磁控溅射法在BeO基片上制备了TaN微波薄膜衰减器。仿真结果表明,所设计的微波薄膜衰减器在DC^3GHz工作频率内,衰减量为12 dB,输入端口电压驻波比小于1.1。测试结果表明,所制备的微波薄膜衰减器在DC^3GHz工作频率内,衰减量为(12.0±0.5)dB。
Based on the T-attenuation network, a microwave thin-film attenuator operating at DC-3GHz was designed and simulated. The TaN thin-film microwave attenuator was fabricated on BeO substrate by magnetron sputtering. The simulation results show that the attenuation of the designed microwave thin-film attenuator is 12 dB in the frequency range of DC-3GHz and the input port VSWR is less than 1.1. The experimental results show that the attenuation of the fabricated microwave thin-film attenuator is （12.0±0.5） dB in the frequency range of DC-3GHz.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2012年第3期64-66,共3页
Electronic Components And Materials
基金
教育部支撑技术资助项目(No.625010305)
四川省支撑计划资助项目(No.2010GZ0156)
中央高校基本科研业务费专项资金资助项目(No.ZYGX2010X007)
关键词
微波薄膜衰减器
TaN薄膜
T型衰减网络
microwave thin-film attenuator
TaN thin film
T-attenuation network
