摘要
报道了一种Ka波段实时延MEMS移相器芯片。该移相器基于开关线式移相器设计原理,集成了4个MEMS三端口直接接触式毫米波开关单元,使用共面波导（CPW）传输线,利用阶梯阻抗的方式实现传输线拐角和CPW空气桥结构的传输线阻抗匹配。芯片采用RF MEMS表面牺牲层工艺制作在400μm厚的高阻硅衬底上,面积为1.4 mm×2.8 mm。测试显示,在34~36 GHz频率范围内,相移误差3.2°,插入损耗2 dB,反射损耗小于-15 dB。
A true-time-delay Ka-band 0/∏ MEMS phase shifter is reported, which is based on switched-line design and composed of 4 dc-contact series MEMS switches. The stepped impedance coplanar waveguide （CPW） lines serve to mitigating the mismatch caused by the bend connecters and air-bridge structures. The phase shifter is fabricated on a 400/~m thickness high resistivity silicon wafer using low temperature metal-dielectric surface micromachining process, the chip size is 1.4 min×2.8 mm. Experimental data show a maximum phase error of 3.2°, an insertion loss of 2 dB and a return loss of better than -15 dB from 34GHz to 36 GHz.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2012年第1期68-72,共5页
Research & Progress of SSE
