摘要
为了更好的了解ITO靶材的毒化机理,分别介绍了磁控溅射技术制备薄膜的基本原理,综述了ITO靶材在溅射过程中的毒化机理研究的现状,分析了影响ITO靶材毒化现象可能的原因,详细介绍了现阶段3种解决ITO靶材毒化现象的方法:不同工艺制备ITO靶材的影响、最佳Sn掺杂量和其他元素的掺杂等的影响以及溅射工艺的影响,指出了他们各自缓解ITO靶材毒化现象的原理。并且展望了未来解决我国ITO靶材毒化问题的发展方向。为我国ITO靶材的发展提供一定的参考。
In order to better understand the ITO target poisoning mechanism,this paper introduces the technology of magnetron sputtering thin film preparation principle,reviews the poisoning research present situation of the ITO target in the sputtering process,analyzed the possible causes effecting ITO target poisoning phenomenon,introduces in detail the present 3 kinds of solution ITO target poisoning phenomenon method process for the preparation of ITO target:different effects,the best Sn dopant and other elements of the dopant and the influence of the sputtering process,points out their remission ITO target poisoning phenomenon principle,and looks to the future to solve our country ITO toxicity problem of targets the development direction,which provides certain reference function to our country ITO target development.
出处
《湖南有色金属》
CAS
2012年第1期46-50,共5页
Hunan Nonferrous Metals
关键词
ITO靶材
溅射
毒化
ITO target
sputtering
poisoning
