铝诱导晶化真空蒸镀多晶硅薄膜的研究

Study on Al-induced crystallization of polycrystalline silicon thin films by vacuum evaporation

采用真空蒸镀的方法在玻璃衬底上沉积1层非晶硅薄膜,再通过铝诱导晶化的方法制备出晶粒分布较均匀、晶粒尺寸0.5～5μm、晶化率达到89%的多晶硅薄膜。研究了衬底距离、衬底温度、退火温度对薄膜表面形貌、晶粒尺寸和分布及晶化率的影响。结果表明适中的衬底距离下得到的薄膜晶粒分布均匀,表面平整度好,薄膜厚度较大。薄膜的晶化率随着衬底温度和退火温度的提高而增大;随着退火温度的进一步提高,薄膜的晶化率达到最大值然后降低。

Amorphous silicon thin films were deposited on glass substrates by vacuum evaporation then transformed into polycrystalline silicon by A1C. Grain size of the thin film was 0.5-5μm, crystalline volume fractionwas 89 % and grain distribution was uniform. The effect of substrate distance, substrate temperature and annealing conditions on surface morphology, grain size and crystalline volume fraction was studied in this paper. Theresults indicated that films prepared under a certain substrate distance were more smooth and thicker. Better crystallized films were obtained at a high temperature and an appropriate annealing temperature.