摘要
利用射频(RF)磁控溅射在玻璃基片上共溅射沉积Cu-Sn预制膜。采用固态硒化法,制备Cu/Sn化学计量比在1.87~2.22之间的Cu2SnSe3薄膜。研究了Cu/Sn比率对Cu2SnSe3薄膜的晶体结构、微结构、光学性能以及电学性能的影响。X射线衍射(XRD)结果表明,所制备的Cu2SnSe3薄膜为立方晶体结构,具有(111)择优取向;贫铜的Cu2SnSe3薄膜光学带隙Eg随着Cu/Sn比率增大而增大;富铜的Cu2SnSe3薄膜光学带隙Eg随着Cu/Sn比率增大而不变。薄膜电阻率为1.67~4.62mΩ.cm。
Cu-Sn preeursors deposited using RF magnetron co-sputtered technique onto glass substrates. Then the Cu2SnSe3 thin films with Cu/Sn ratio in the range 1.87-2.22 were obtained by selenizing the Cu-Sn preeursors in the atraosphere of Se vapor. The influence of the variation of Cu/Sn molar ratio from 1.87 to 2.22 on the particle morphology,crystal structure and optical properties of Cu2 SnSe3 samples was studied. Powder X-ray diffrac- tion (XRD) patterns reveal that Cu2SnSe3 films deposited with Cu/Sn ratio in the range 1.87-2.22 are found to cubic crystal structure with a (111) preferred orientation. Band gap of the films is found to increase in Cu-poor, but unchanged in Cu-rich. Electrical resistivity of the films is found to lie in the range 1.67-4.62mΩ cm depending on Cu/Sn ratio.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2012年第5期630-634,共5页
Journal of Functional Materials
基金
国家自然科学基金资助项目(51171124,50771069)
四川省科技支撑计划基金资助项目(2008FZ0002)
教育部新世纪人才基金资助项目(NCET-08-0380)
金属材料强度国家重点实验室开放基金资助项目(201011006)