Cu/Sn比率对Cu_2SnSe_3薄膜若干物理性质的影响

Effect of Cu/Sn ratio on the physical properties of Cu_2SnSe_3 thin films

利用射频(RF)磁控溅射在玻璃基片上共溅射沉积Cu-Sn预制膜。采用固态硒化法,制备Cu/Sn化学计量比在1.87～2.22之间的Cu2SnSe3薄膜。研究了Cu/Sn比率对Cu2SnSe3薄膜的晶体结构、微结构、光学性能以及电学性能的影响。X射线衍射(XRD)结果表明,所制备的Cu2SnSe3薄膜为立方晶体结构,具有(111)择优取向;贫铜的Cu2SnSe3薄膜光学带隙Eg随着Cu/Sn比率增大而增大;富铜的Cu2SnSe3薄膜光学带隙Eg随着Cu/Sn比率增大而不变。薄膜电阻率为1.67～4.62mΩ.cm。

Cu-Sn preeursors deposited using RF magnetron co-sputtered technique onto glass substrates. Then the Cu2SnSe3 thin films with Cu/Sn ratio in the range 1.87-2.22 were obtained by selenizing the Cu-Sn preeursors in the atraosphere of Se vapor. The influence of the variation of Cu/Sn molar ratio from 1.87 to 2.22 on the particle morphology,crystal structure and optical properties of Cu2 SnSe3 samples was studied. Powder X-ray diffrac- tion （XRD） patterns reveal that Cu2SnSe3 films deposited with Cu/Sn ratio in the range 1.87-2.22 are found to cubic crystal structure with a （111） preferred orientation. Band gap of the films is found to increase in Cu-poor, but unchanged in Cu-rich. Electrical resistivity of the films is found to lie in the range 1.67-4.62mΩ cm depending on Cu/Sn ratio.