摘要
The high purity (Ce0.8Nd0.2O1.9)1-x(MoO3)x(x=0, 0.005, 0.010, 0.020; Ce0.8Nd0.2O1.9=NDC) solid solutions were prepared by modified sol-gel method. The structures and electric conductivities were characterized by X-ray diffraction(XRD), field-emission scanning electron microscopy(FESEM) and electrochemical impedance spectros copy(EIS). The XRD results show that the materials were pure phase with a cubic fluorite structure. Compared to the undoped-NDC samples, MoO3 doped-NDC showed higher sintered density(over 96%) at reduced sintering tempera ture. The electric conductivity(σt) of (Ce0.8Nd0.2O1.9)1-x(MoO3)x at 400 °C was 9.58×10-4 S/cm when x=0.010, which was higher than that of undoped-NDC samples(σt=3.29×10-4 S/cm). The obtained optimal amount of the MoO3 was x=0.010 in this system.
The high purity (Ce0.8Nd0.2O1.9)1-x(MoO3)x(x=0, 0.005, 0.010, 0.020; Ce0.8Nd0.2O1.9=NDC) solid solutions were prepared by modified sol-gel method. The structures and electric conductivities were characterized by X-ray diffraction(XRD), field-emission scanning electron microscopy(FESEM) and electrochemical impedance spectros copy(EIS). The XRD results show that the materials were pure phase with a cubic fluorite structure. Compared to the undoped-NDC samples, MoO3 doped-NDC showed higher sintered density(over 96%) at reduced sintering tempera ture. The electric conductivity(σt) of (Ce0.8Nd0.2O1.9)1-x(MoO3)x at 400 °C was 9.58×10-4 S/cm when x=0.010, which was higher than that of undoped-NDC samples(σt=3.29×10-4 S/cm). The obtained optimal amount of the MoO3 was x=0.010 in this system.
作者
ZHOU De-feng1, ZHAO Gui-chun1, YANG Mei1, XIA Yan-jie2 and MENG Jian2 1. School of Chemistry and Life Science, Changchun University of Technology, Changchun 130012, P. R. China
2. State Key Laboratory of Rare Earth Resources Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China
基金
Supported by the National Natural Science Foundation of China(No.20871023)
the Jilin Provincial Science Research Foundation, China(Nos.20070510, 20101549)