0.18μm工艺小规模嵌入式EEPROM存储阵列单Block电路

0.18 μm Single Block Circuit in Small-scale Embedded EEPROM Array

介绍了一种EEPROM存储阵列单Block电路,可以降低RFID TAG存储阵列电路的漏电流.采用EEPROM嵌入式0.18μm工艺,工作电压1.8 V.改进后的电路每个存储单元可以降低最大8μA的漏电流.

A new block circuit for embedded EEPROM is presented,which can reduce leakage circuit of memory efficiently in a short-range passive RFID tag.The fabrication technology is the 0.18 μm four-metal two-poly mixed signal CMOS process with embedded EEPROM.The proposed circuit can reduce maximum to 8 μA per bit cell.