PIN硅光二极管在n/γ混合辐射场中的探测技术研究

The Detection Technology of PIN Silicon Photodiode Applied in the n/γ Mixed Radiation Field

PIN硅光型半导体探测器较传统辐射探测器具有响应快、抗干扰强、体积小、灵敏度高、能量分辨率高以及无需高压等优点,在个人剂量仪、X射线荧光分析、镀层测厚、放射诊断等粒子辐射测量领域中被广泛采用。采用6LiI与BGO晶体把n和γ射线转换至PIN的有效光谱探测范围内,同时参考PIN硅光二极管的电路等效模型,设计与之匹配的电荷前放电路和整机测量系统,对前放噪声、射线脉冲波形以及电磁辐射干扰进行数字采样频谱分析,最后完成对探测器重复性、灵敏度、能量响应的性能测试实验。

PIN-type silicon semiconductor detectors,which is widely used in Personal dosimeters,X-ray fluorescence analysis,coating thickness measurement,diagnostic radiology and other particle radiation measurement,have faster response,stronger anti-interference,smaller size,higher sensitivity,higher energy resolution and without high voltage than traditional radiation detectors.We use the 6LiI crystal and BGO to change the n and γ-ray spectrum into the effective detection range of PIN.Referenced to the equivalent circuit model of the PIN silicon photodiode,we design the charge preamplifier circuit and the measurement system to match it.At the same time,we do the sample measurement and spectrum analysis of the preamplifier noise,pulse of rays and electromagnetic radiation interference digital measurement.Finally,we complete the detector＇s repeatability,sensitivity,energy response performance testing experiments.