太赫兹场作用下的GaAs双量子阱的光吸收分析

Optical Absorption in Terahertz-Driven GaAs Quantum Well

用密度矩阵理论分析了在超快脉冲及太赫兹场作用下GaAs量子阱和双量子阱的光吸收谱.分析表明:在直流和太赫兹场作用下,由于量子约束斯塔克效应,光吸收谱呈现出多个激子吸收峰.改变太赫兹的强度和频率,吸收谱出现恶歇分裂,并产生边带,这些分裂主要来源于太赫兹作用下激子的非线性效应.

The optical absorption spectra in quantum well driven by both an intense growth-direction-oriented terahertz（THz） and an optical pulse are calculated within the theory of density matrix.It is shown that the electric field produces multiple absorption peaks which come from the quantum confined Stark effect.Much rich optical absorption spectra and the excitonic peak spiting show up when changing the THz field intensity.The Autler-Towns splitting results from the THz nonlinear dynamics of confined excitons and result in the band side generation.