摘要
由己提出的离子迁移模型推导出在电场助溶作用下膜/溶液界面阻挡层生长速度下降时,即溶液对膜具有溶解作用时的孔中酸化溶液的临界H^+浓度公式。研究了公式中各因素对V-t曲线参数的影响,实验结果与理论分析相吻合。改进了超薄切片样品制备方法使之适用于观察厚度大于20～30μm的多孔膜的底部结构。超薄切片的透射电镜观察表明,阻挡层厚度与电压成正比,二次阳极氧化后阻挡层厚度增加,但没有出现对应大孔径的孔起源,原多孔膜部份不变,孔中可观察到副反应产生的疏松沉积物,阻挡层中可见到规则的原多孔膜结构单元和孔的痕迹。
It is proposed that a critical concentration of hydrogen ion in pores of the anodic film exists, above which the film material at pore bases dissolves during reanodizing process. A formula on the critical hydrogen ion concentration is derived, based on ion diffusion model.Good agreement is reached between the experimental results and the theoretical predictions from the formula.The improved sample preparation technique in ultramicrotomed sectioning used in this work, allowed direct observation of pore bases of thick porous films(20～30μm) in TEM. Morphological features of the microstructure of the film and the deposited loose molybdenum sulphide are described.
出处
《中国腐蚀与防护学报》
CAS
CSCD
1990年第2期97-108,共12页
Journal of Chinese Society For Corrosion and Protection
基金
国家自然科学基金
