期刊文献+

氧化孔形状对光子晶体垂直腔面发射激光器模式的影响 被引量:4

Study on influence of oxide aperture shape on modal characteristics of VCSELs
原文传递
导出
摘要 用时域有限差分方法对氧化孔限制型外腔式光子晶体垂直腔面发射激光器(VCSEL)在小氧化孔下氧化孔形状对激光器模式特性的影响进行了模拟计算.建立了三维光子晶体面发射激光器光场计算模型,分析了氧化孔形状变化对器件远场特性与频率特性的影响.研究发现,氧化孔形状可影响光子晶体VCSEL的模式特性,尤其是频谱特性.从模场分布的角度可解释为菱形氧化孔的对称性与高阶模的不一致.但随着光子晶体刻蚀深度的增加和氧化孔的增大,这种影响逐渐减小,分析解释了其原因.研究结果为提高光子晶体面发射激光器的性能提供了参考. The effects of oxide aperture shape whose size is small, on the mode characteristics of external cavity oxide-confined photonic crystal vertical cavity surface emitting laser (VCSEL) is studied extensively based on the finite-difference time-domain algorithm. A new three-dimensional model of optical field in photonic crystal VCSEL is built and the influence of the variation in aperture shape on the characteristics of far-field and spectrum is pointed out. It is found that the modal characteristics of PhC-VCSEL are influenced by the shape of oxide aperture, the influence on spectrum feature is more apparent. It can be explained from the distribution of modal field by the fact that the symmetrical characteristic of prismatic oxide aperture is not identical to that of high-order mode. But the influence is less apparent while the depth of photonic crystal hole is deeper. The reason for this matter is illustrated. The results can be used to guide the fabrication of external cavity oxide-confined photonic crystal VCSELs.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2012年第5期160-165,共6页 Acta Physica Sinica
基金 国家高技术研究发展计划(863计划)(批准号:2008AA03Z402) 北京市自然科学基金(批准号:4092007) 国家自然科学基金(批准号:61076044)资助的课题~~
关键词 光子晶体 垂直腔面发射激光器 氧化孔 时域有限差分 photonic crystal, vertical cavity surface emitting lasers, oxide aperture, finite difference time domain
  • 相关文献

参考文献23

  • 1Zhang W L,Pan W,Luo B,Li X F,Zou X H,Wang M Y 2007 Chin.Phys.16 1996.
  • 2Tomasz C,Maciej D,Krassimir P 2007 Opt.Exp.15 1301.
  • 3Song D S,Kim S H,Park H G,Kim C K,Lee Y H 2002 Appl. Phys.Lett.80 3901.
  • 4Yokouchi N,Danner A J,Choquette K D 2003 Appl.Phys.Lett. 82 3608.
  • 5Siriani D F,Tan M P,Kasten A M,Harren L A C,Leisher P O, Sulkin J D,Raftery J J,Danner A J,Giannopoulos A V,Choquette K D 2009 J.Sel.Top.Quantum Electron.15 909.
  • 6Alias M S,Shaari S,Leisher P O,Choquette K D 2010 Appl.Phys. B:Lasers and Optics 100 453.
  • 7黄静 郭霞 渠红伟 廉鹏 米文军 邹德恕 沈光地.半导体光电,2003,:341-341.
  • 8Ivanov P S,Sukhoivanov I A 2000 2nd International Conference on Transparent Optical Networks Gdansk,Poland 213.
  • 9Bienstman P,Baets R,Vukusic J,Larsson A,Noble M J,Brunner M,Gulden K,Debernardi P,Fratta L,Bava G P,Wenzel H, Benjamin K,Conradi O,Pregla R,Riyopoulos S A,Seurin J F P, Chuang S L 2001 J.Quantum Electron.37 1618.
  • 10Sharizal A M,Leisher P O,Choquette K D,Choudhury P K,Mitani S M,Razman Y M,Fatah A M A 2007 Optik 120 121.

二级参考文献30

  • 1佟存柱,牛智川,韩勤,吴荣汉.1.3μm GaAs基量子点垂直腔面发射激光器结构设计与分析[J].物理学报,2005,54(8):3651-3656. 被引量:5
  • 2郭长志,Acta Phys Sin,1996年,5卷,185页
  • 3Pan Z,Acta Phys Sin,1995年,4卷,810页
  • 4Zhao Y G,IEEE Photon Technol Lett,1995年,7卷,231页
  • 5郭长志,Workshop on Semiconductor Superlattice/Quantum Well Physics and Qpto-Eletronic Devices,1991年
  • 6林永昌,光学薄膜原理,1990年
  • 7赵一广,半导体学报,1989年,10卷,254页
  • 8郭长志,半导体激光模式理论,1989年
  • 9郭长志,半导体学报,1983年,4卷,247页
  • 10Agethen M, Keiper D, Janssen G, Brennemann A, Veiling P, van den Berg C, Bertenburg R M 2002 Indium Phosphide and Related Materials Conference 14^th IPRM p673

共引文献19

同被引文献69

引证文献4

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部