Ge-Sb-Se硫系薄膜制备及光学特性研究

Study on fabrication and optical properties of Ge-Sb-Se thin films

介绍了几种常见的硫系薄膜制备方法,根据现有实验条件采用热蒸发法和磁控溅射法制备出Ge-Sb-Se三元体系硫系薄膜,通过台阶仪测试薄膜的厚度和表面粗糙度,计算出两种制备方法的成膜速率,并通过X射线光电子能谱测试了两种制备方法所得薄膜与块体靶材组分的差别.利用Z扫描技术和分光光度计测试了热蒸发法制备所得薄膜的三阶非线性性能和透过光谱,计算出非线性折射率、非线性吸收系数和薄膜厚度等参数.结果表明热蒸发法制备Ge-Sb-Se薄膜具有良好的物理结构和光学特性,在集成光学器件方面很高的应用潜力.

Several methods of fabricating chalcogenide thin films are introduced. In this paper, thermal evaporation and radio frequency methods are used to fabricate Ge-Sb-Se thin films. The thicknesses and roughnesses of the films are measured by surface profile-meter. The film growth rates are calculated. The component difference between film and target material is tested by X-ray photoelectron spectroscopy. The third-order optical nonlinearity and the transmission spectra of films fabricated by thermal evaporation are inves- tigated using femto-second Z-scan method and spectrophotometer, to obtain the values of nonlinear refraction, nonlinear absorption and thickness of films. The results show that the films fabricated by thermal evaporation have excellent physical structures and optical properties, and possess promising potential applications in integrated optical devices.