多壁碳纳米管薄膜的压阻效应研究

Study on the piezoresistive effect of the multiwalled carbon nanotube films

对多壁碳纳米管薄膜的压阻效应进行了研究.实验所用的多壁碳纳米管用热灯丝化学气相沉积法合成,压阻效应用三点弯曲法测量.研究发现:在室温下与500微应变内,原始的多壁碳纳米管薄膜无明显压阻效应,而经化学修饰处理的碳纳米管膜的压阻因子最高可达120左右,大大超过多晶硅(Si)在35℃时的压阻因子30,并且压阻因子与制备方法密切相关.重点讨论了多壁碳纳米管薄膜产生压阻效应的机制.

In this paper, the piezoresistive effect of the multiwalled carbon nanotube （MWCNT） film is studied. Carbon nanotubes are synthesized by hot filament chemical vapor deposition. The piezoresistive effect in the MWCNT film is studied by a three-point bending test. The gauge factor of the MWCNT film under 500 microstrain is found to be at most 120 at room temperature, exceeding that of polycrystalline silicon （30） at 35℃. The origin of the piezoresistivity in MWCNT film is also discussed.