摘要
HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N（C2H5）（CH3）]4 and H2O2.A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing.The composition,the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment.With a nitrogen concentration increase from 1.41 to 7.45%,the bandgap of the films decreased from 5.82 to 4.94 eV.
HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N（C2H5）（CH3）]4 and H2O2.A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing.The composition,the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment.With a nitrogen concentration increase from 1.41 to 7.45%,the bandgap of the films decreased from 5.82 to 4.94 eV.
基金
Project supported by the National Natural Science Foundation of China(Nos.61076114,61106108)
the Shanghai Educational Develop Foundation,China(No.10CG04)
the SRFDP(No.20100071120027)
the Fundamental Research Funds for the Central Universities and the S&T Committee of Shanghai,China(No.1052070420)
