Holding-voltage drift of a silicon-controlled rectifier with different film thicknesses in silicon-on-insulator technology

Holding-voltage drift of a silicon-controlled rectifier with different film thicknesses in silicon-on-insulator technology

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摘要 This paper presents a new phenomenon,where the holding-voltage of a silicon-controlled rectifier acts as an electrostatic-discharge protection drift in diverse film thicknesses in silicon-on-insulator（SOI） technology. The phenomenon was demonstrated through fabricated chips in 0.18μm SOI technology.The drift of the holding voltage was then simulated,and its mechanism is discussed comprehensively through ISE TCAD simulations. This paper presents a new phenomenon,where the holding-voltage of a silicon-controlled rectifier acts as an electrostatic-discharge protection drift in diverse film thicknesses in silicon-on-insulator（SOI） technology. The phenomenon was demonstrated through fabricated chips in 0.18μm SOI technology.The drift of the holding voltage was then simulated,and its mechanism is discussed comprehensively through ISE TCAD simulations.

作者姜一波曾传滨杜寰罗家俊韩郑生

机构地区 Institute of Microelectronics

出处《Journal of Semiconductors》 EI CAS CSCD 2012年第3期38-41,共4页 半导体学报（英文版）

基金 Project supported by the National Natural Science Foundation of China(No.60927006)

关键词 holding-voltage drift electrostatic discharge SILICON-ON-INSULATOR silicon-controlled rectifier holding-voltage drift electrostatic discharge silicon-on-insulator silicon-controlled rectifier

分类号 TN304.12 [电子电信—物理电子学]

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Journal of Semiconductors

2012年第3期

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Holding-voltage drift of a silicon-controlled rectifier with different film thicknesses in silicon-on-insulator technology

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