摘要
SRAM-based FPGA devices are irradiated by ^（60）Coγrays at various aose rates 10 investigate total dose effects and the evaluation method.The dependences of typical electrical parameters such as static power current, peak-peak value,and delay time on total dose are discussed.The experiment results show that the static power current of the devices reduces rapidly at room temperature（25℃） and high temperature（80℃） annealing after irradiation.When the device is irradiated at a low dose rate,the delay time and peak-peak value change unobviously with an increase in the accumulated dose.In contrast,the function parameters completely fail at 2.1 kGy（Si） when the dose rate increases to 0.71 Gy（Si）/s.
SRAM-based FPGA devices are irradiated by ^（60）Coγrays at various aose rates 10 investigate total dose effects and the evaluation method.The dependences of typical electrical parameters such as static power current, peak-peak value,and delay time on total dose are discussed.The experiment results show that the static power current of the devices reduces rapidly at room temperature（25℃） and high temperature（80℃） annealing after irradiation.When the device is irradiated at a low dose rate,the delay time and peak-peak value change unobviously with an increase in the accumulated dose.In contrast,the function parameters completely fail at 2.1 kGy（Si） when the dose rate increases to 0.71 Gy（Si）/s.
