摘要
通过改变蒸发源、衬底温度和氧的流量 ,用反应蒸发法制备了不同晶粒尺寸的Si/SiOx 薄膜。用X射线衍射、X光电子能谱和红外光谱分别测试了薄膜的结构、组分及氧在薄膜中的存在形态。实验发现氧的存在形态与蒸发条件密切相关 :对以硅为蒸发源的样品 ,衬底温度较低时 ,以间隙氧形态存在。随着衬底温度的升高 ,SiOx 量逐渐增多 ,间隙氧逐渐减少 ,72 0℃以上产生SiO2 。氧流量的增加有利于间隙氧的生成和氧含量的增加 ;对以SiO为蒸发源的样品 ,衬底温度较低时 ,主要以间隙氧的形态存在 ,同时存在SiO2 和SiOx。随着衬底温度的升高 ,有利于SiOx 和SiO2 的增加。 80 0℃退火后 ,SiOx 增多 ,同时产生大量SiO2 白硅石。荧光光谱表明 :薄膜的发光跟氧的存在形态密切相关 ,其可能原因是纳米硅被大量宽禁带的SiO2 或SiOx基体包裹所产生的量子效应。
Granular Si SiO x thin films were grown by reactive evaporation.The structures and chemical composition of the films were studied with X ray diffraction and X ray photoelectron spectroscopy,respectively.The bonding configuration of oxygen in the film was determined with infrared absorption.We found that the size of silicon clusters and its sizes distribution can be controlled by varying the substrate temperature or oxygen flow rate.Room temperature luminescence was observed for the samples grown by evaporating SiO only.Oxygen bonding configuration depends on substrate temperature,oxygen gas flow rate and materials being evaporated.
出处
《真空科学与技术》
CSCD
北大核心
2000年第2期103-107,共5页
Vacuum Science and Technology
基金
国家自然科学基金! ( 69890 2 3 0 )
关键词
纳米硅-氧化硅
光致发光
薄膜
硅材料
Reactive evaporation,Granular Si SiO x ,Infrared absorption,Photoluminescence
