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采用AlN绝缘栅的AlGaN/GaN凹栅槽结构MISHEMT器件

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摘要 本文通过射频磁控反应溅射实现高质量的AlN绝缘栅层,采用感应耦合等离子体(ICP)刻蚀出凹栅槽结构,将MIS结构和凹栅槽结构的优点相结合,研制成功AlGaN/GaN凹栅槽结构MIS HEMT器件,在提高器件栅控能力的同时,降低栅极漏电,提高击穿电压。器件栅长0.8μm,栅宽60μm,测得栅压为+5V时最大饱和输出电流为832mA/mm,最大跨导达到210mS/mm,栅压为-15V时栅极反向漏电为6nA/mm。
作者 黄俊 张宗贤 黄峰 魏珂 刘新宇 郝跃 张进诚
机构地区 海峡西岸(云霄)光电产品检测研发中心 中国科学院微电子研究所 西安电子科技大学宽禁带半导体材料与器件重点实验室
出处 《科技创新导报》 2012年第4期6-8,共3页 Science and Technology Innovation Herald
关键词 ALGAN/GAN 凹栅槽 ALN MISHEMT
分类号 TN386 [电子电信—物理电子学]
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参考文献10

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二级参考文献15

  • 1陈晓娟,刘新宇,和致经,刘建,吴德馨.C波段0.75mmAlGaN/GaN功率器件[J].Journal of Semiconductors,2005,26(9):1804-1807. 被引量：2
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  • 3罗卫军,陈晓娟,李成瞻,刘新宇,和致经,魏珂,梁晓新,王晓亮.高性能1mm SiC基AlGaN/GaN功率HEMT研制[J].Journal of Semiconductors,2006,27(11):1981-1983. 被引量：2
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科技创新导报
2012年 第4期

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