4H-SiC衬底表面SiC薄膜的同质外延生长

Homoepitaxial Growth of SiC Thin Film on 4H-SiC Substrate

以4H-SiC为衬底,在不同衬底温度下进行SiC薄膜的同质外延生长。利用反射式高能电子衍射(RHEED)、扫描电子显微镜(SEM)、拉曼(Raman)等测试手段,对生长样品的结构和结晶质量进行了表征。根据测试结果发现,在衬底温度为1200℃时能够得到质量较高的薄膜,在另外两个温度(1100℃和1300℃)条件下得到的薄膜质量是较差的。

The SiC thin films were grown on 4H-SiC substrates at different substrate temperatures.The structure and crystalline quality of the SiC thin film were characterized by reflection high energy electron diffraction（RHEED）,Raman scattering spectroscopy and scanning electron microscope（SEM）.The results indicated that the SiC film with better crystalline quality was obtained at the substrate temperature of 1200℃.However the crystalline quality of the films fabricated at lower substrate temperature（1100 ℃） and higher substrate temperature（1300 ℃） were poorer.