双靶反应磁控共溅射制备Al掺杂ZnO薄膜及其光电性能

PREPARATION AND PHOTOELECTRIC PROPERTY OF Al DOPED ZnO THIN FILMS BY DUAL TARGET REACTIVE MAGNETRON SPUTTERING

采用双靶反应磁控共溅射法在Si(100)和载玻片衬底上制备了Al掺杂ZnO(ZAO)薄膜,利用X射线衍射仪(XRD)、原子力显微镜(AFM)、荧光分光光度计、紫外可见光分光光度计,四探针测试仪等手段对薄膜进行表征,研究了Al掺杂对ZnO薄膜结构和光电性能的影响。结果显示,Al掺杂未改变ZnO的晶体结构,ZAO薄膜沿(002)晶面生长,具有单一的紫光发射峰,在可见光区透过率大于80%,当Zn靶和Al靶溅射功率分别为100 W和20W时,ZAO薄膜的电阻率为8.85×10-4W.cm,表明利用双靶反应磁控共溅射法制备的ZAO薄膜具有较好的光电性能。

Al-doped ZAO thin films were deposited on Si（100） and glass substrates by dual target reactive magnetron sputtering.The characters and the effect of Al doping on crystal structure and photoelectric properties of ZnO thin films were investigated by X-ray diffraction（XRD）,atomic force microscope（AFM）,fluorescence photometer,ultraviolet spectrophotometer and four-point probe sheet resistance measurement.The results show that the structure of Al-doped ZAO thin film is similar to that of ZnO thin film and ZAO thin film grow along（002） crystal plane.ZAO thin film shows a single violet emitting peak on the photoluminescence spectra.The average optical transmittance of all films is higher than 80% in the visible range.The electrical resistivity of ZAO thin film is 8.85×10-4W·cm when the sputtering powers are 100 W and 20W for Zn and Al targets respectively.It indicates the ZAO thin films prepared by dual target reactive magnetron sputtering have excellent photoelectric properties.