抗辐射数字电路加固技术研究

Study of the Radiation-hard Ability of Digital Circuits

文章对电路抗辐射的机理进行了研究,提出了几种提高数字电路抗辐射能力的方法:通过工艺控制减小辐射后的背栅阈值电压漂移,通过版图增加体接触、采用环型栅等结构提高单元的抗辐射能力,通过对电路关键节点的加固提高整体电路的抗辐射能力。为了验证加固方法的可靠性,设计了一款电路进行抗总剂量、抗瞬态剂量率、抗中子辐射、抗单粒子辐射等多种试验。通过辐照试验结果可以看到,采用抗辐照方法设计的电路具有较强的抗辐照能力,为今后抗辐照电路的研制和开发奠定了坚实的基础。

In this paper, we studied the mechanism of radiation and offered several optimization methods to improve the radiation-hard ability of digital circuits. According to the research, we decrease threshold voltage excursion by process control, improve the radiation-hard ability by adding body-contact and using roundgate, improve the radiation-hard ability of the key-point. This paper design a digital circuit to validate the radiation-hard method by total dose radiation experiment, trans-radiation experiment, neutron experiment and SEU experiment. According to the experiment results, the radiation-hard ability of the circuit is improved.