摘要
LPCVD多晶硅薄膜发雾对CMOS器件性能有重大影响,文章分析了多晶硅薄膜发雾的形成机理与影响因素,指出了低温、低压以及保持气路系统的清洁是消除多晶"发雾"的有效措施。根据多晶硅薄膜雾状斑点的形状与分布位置,对硅片表面缺陷的来源进行了分类,并从清洗工艺、污染物成分分析、前道工序等方面提出了相应的解决措施。
The fogging of LPCVD poly Si films has great effects on properties of CMOS device, in this paper, the formation mechanism and influencing factors of fogging were analyzed, the solution of adopting low temperature, low pressure and keeping gas system clean to eliminate the fogging was suggested. According to the shape and location of fogging, the surface defects were classified, and the proposal were put forward in the aspects of clean process, contamination analysis and previous process to avoid fogging.
出处
《电子与封装》
2012年第2期40-43,共4页
Electronics & Packaging
