摘要
本文采用磁控溅射系统制备了Si/Al/BN多层膜结构,并通过XRD,AFM,傅立叶红外光谱仪,纳米压痕仪等对Si/Al/BN多层膜结构进行了表征,表征结果表明本实验制备的Si/Al/BN多层膜基片符合高频声表面波器件基片的要求,为金刚石/IDT/BN多层膜超高频声表面波器件的制备奠定了基础.
Si/Al/BN multilayer structure was deposited by magnetron sputtering system,and characterized by XRD,AFM,Fourier transform infrared spectroscopy,Nano-indenter.And the characterization show that the experimental preparation of Si/Al/ BN multilayer substrate meet the requirements of high-frequency surface acoustic wave device,and make a foundation for the preparation of diamond/IDT/BN multilayer ultra-high frequency SAW devices.
出处
《天津理工大学学报》
2012年第1期76-78,88,共4页
Journal of Tianjin University of Technology
基金
国家自然科学基金(50972105
60806030)
天津市自然科学基金(09JCZDJC16500
08JCYBJC14600)