摘要
本文采用MOCVD工艺,通过调整衬底温度(固定其它工艺参数)来沉积用于太阳电池的InxGa1-xN薄膜,并利用X射线衍射仪(XRD)、X射线荧光光谱仪(XRF)、扫描电子显微镜(SEM)和台阶仪来分析研究其结构特性.衬底温度较低时有利于薄膜的In注入,衬底温度较高时有利于沉积高结晶质量的InxGa1-xN薄膜.当衬底温度为470℃时,在硅衬底上所沉积的InxGa1-xN薄膜In含量较高,为46.92%;薄膜表面光滑致密,粗糙度小;颗粒较大,且颗粒大小均匀.
In this article,InxGa1-xN thin films were deposited by MOCVD technique for solar cells by adjusting substrate temperature（other constant technical parameters）.The structural properties of the films were measured by XRD,XRF,SEM and step profiler.Lower substrate temperature is favorable for indium incorporation into InxGa1-xN thin films,and higher substrate temperature is favorable for the deposition of high quality InxGa1-xN thin films.When substrate temperature was 470 ℃,indium content of InxGa1-xN thin films deposited on Si substrates was higher and was 46.92 at%,the surface of the films was slick and compact,there were great and uniform grains in the films surface.
出处
《天津理工大学学报》
2012年第1期79-82,共4页
Journal of Tianjin University of Technology
基金
天津市教委基金资助项目(20060607)
大学生创新实验计划项目(DCSX10-002)
