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控制降温对近空间升华法沉积CdZnTe薄膜形貌与结构的影响 被引量:1

Effects of cooling method on the morphology and structure of CdZnTe film deposited by close-spaced sublimation
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摘要 采用场发射扫描电镜和X射线衍射技术研究了生长结束后的降温过程对以近空间升华法生长的CdZnTe薄膜形貌与结构的影响。分析了快速(炉冷,673K以上-8K/min)和慢速(-2K/min)两种降温速率下获得的CdZnTe薄膜的结构与形貌,并考察了降温中是否阻断生长源向薄膜的传质的影响。结果表明,所得到的薄膜均为闪锌矿结构,降温时薄膜的持续生长将抑制晶粒在平面内铺展而使其棱角钝化的趋势,以较慢的速率降温和降温时阻断传质均有利于提高薄膜的致密度,降低粗糙度及薄膜的织构强度。 This paper presents the study on the influences of the final cooling processes on the morphology and micro-structure of CdZnTe film deposited via close-spaced sublimation using field emission scanning electron microscopy and X-ray diffraction techniques. The influences of both the cooling speed and whether mass transfer stopped during cooling after the growth stage were studied, using fast (furnace cooling, -8K/min when T〉673K) and low (-2K/rain) cooling speeds, respectively. All the films obtained with different conditions possess zinc blende structure. Both lowering the cooling speed and stopping the mass transfer will improve the film density, decrease the roughness, and reduce the texture strength of the film. The growth during cooling suppresses the two dimensional in plane spreading of the grains that blunts their edges.
出处 《功能材料》 EI CAS CSCD 北大核心 2012年第6期725-728,共4页 Journal of Functional Materials
基金 国家重点基础研究发展计划(973计划)资助项目(2011CB610406) 国家自然科学基金资助项目(50872111 50902113 50902114)
关键词 Ⅱ—Ⅵ族半导体 CdZnTe薄膜 近空间升华 Ⅱ-Ⅵ semiconductors CdZnTe film close-spaced sublimation
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  • 1简基康.98中国材料研讨会[M].北京:化学工业出版社,1998.360-363.
  • 2CHU T L, CHU S S. Thin film Ⅱ-Ⅵ photovoltaics[J]. Solid-state Electronis, 1955, 38(3): 533-549.
  • 3ARAMOTO T, KUMAZAWA S, HIGUCHI H, et al. 16% efficient thin film CdS/CdTe solar cells[J]. Jpn J Appl Phys,1997, 36(10): 6304-6305.
  • 4MOUTINHO H R, HASOON F S, ABULFOTUH F, et al. Effects of CdCl2 treatment on the recrystallization and electro-optical properties of CdTe thin films[J]. Vac Sci & Technl A, 1995, 13(6): 2877-2879.
  • 5CHAKRABARTI R S, GHOSH S C. Stability testing of CdS/CdTe thin-film photovoltaic modules[J]. Phys D Appl Phys, 1999, 32(11): 1258-1262.
  • 6蔡伟,张静全,郑家贵,黎兵,蔡亚平,武莉莉,邵烨,冯良桓.近空间升华法制备CdTe薄膜[J].半导体光电,2001,22(2):121-123. 被引量:13
  • 7冯良桓,蔡伟,郑家贵,蔡亚平,黎兵,张静全,武莉莉,朱居木,邵烨.碲化锌复合背接触层对碲化镉太阳电池性能的影响[J].太阳能学报,2001,22(4):401-408. 被引量:24

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  • 1栗红玉,申德振,杨宝均,郑著宏,范希武.MOCVD生长的CdZnTe/ZnTe多量子附的激子光学特性[J].光电子.激光,1996,7(4):202-204. 被引量:1
  • 2张榕,周海平,陈红.碲化镉薄膜太阳能电池及其溅射制备[J].材料导报,2006,20(11):47-50. 被引量:8
  • 3Sellin P J. Thick film compound semiconductors for X- ray imaging applications [J]. Nuclear Instruments and Methods in Physics Research A, 2006,563 : 1-8.
  • 4James R B, Schiratio R C. Hard X-ray, gamma-ray and neu- tron detector physics[C]. Colorado Proceedings of SHE-the International Society for Optical Engineering, 1999.
  • 5Chaure N B, Chaure S, Pandey R K. Cdl-ZhTe thin films formed by non-aqueous electrochemical route[J]. Electrochimica Acta, 2008,54(2) : 296-304.
  • 6Sorgenfrei R, Greiffenberg D, Bachem K H, et al. Growth of thick films CdTe from the vapor phase[J]. J Crystal Growth, 2008,310 : 2062-2066.
  • 7Peng S L, Shen X Y, Tang Z G, et al. Low-tempera- ture Al-induced crystallization of hydrogenated amor- phous Si1-Gex (0.2x1) thin films[J-]. Thin Solid Films, 2008, 516: 2276-2279.
  • 8Nast O, Puzzer T, Koschier L M, et al. Aluminum-in- duced crystallization of amorphous silicon on glass sub-strates above and below the eutectic temperature[J-]. Ap- pl Phys Lett,1998, 73:3214.
  • 9AI-Dhafiri A M, Naseem H A. Metal Induced Crystalliza- tion (MIC) of a-Si produced by magnetron sputtering[C]. Orlando: Conference Record of the 31st IEEE Photovoltaic Specialists Conference, IEEE, 2005. 1516-1519.
  • 10Knaepen W, Detavernier C, Van Meirhaeghe R L, et al. In-situ X-ray diffraction study of metal Induced crystalli- zation of amorphous silicon[J]. Thin Solid Films, 2008, 516 : 4946-4952.

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