高频等离子体阳极氧化铝膜的特性

CHARACTERISTICS OF ALUMINUM OXIDE FILMS ANODIZED IN A HF OXYGEN PLASMA

将真空蒸发沉积的铝膜 ,在一台高频等离子体辉光放电的装置中进行阳极氧化。铝膜表面氧化层的特性用XRD、XPS、AES和四探针法测定。结果表明 ,铝膜表面氧化层结构是γ -Al2O3 ,晶格常数ao =0.79124nm。室温电阻为6.56～0 .11Ω/□或1256.4～4.81Ω/□ ,低温电阻(77～273K)为0.18～0 .38Ω/□。

Vacuum evaporated Al films were anodized in a high frcquency (HF) glow discharge oxygen plasma. The resultant surface oxide layers were characterized by XRD,XPS,AES and four-electrode technique.The results show that the surface oxide layer in Al oxide film is γ-Al2O3 with a lattice constant of ao=0.791 24 nm. Atroom temperature, the surface resistance of the oxide film is 6.56～0.11 Ω/□or1 256.4～4.81 Ω/□;and at lower temperature (77 ～273 K),the surface resistance is 0.18～0.38 Ω/□.