SiON薄膜中氢的研究

Study of Hydrogen in SiON Thin Films

氮氧化硅(SiON)薄膜是一种新型的薄膜材料,具有优良的光电性能、机械性能、钝化性能和化学稳定性能,但杂质氢的存在限制了它的应用。详细阐述了氮氧化硅薄膜中氢杂质的存在活动及其对薄膜性能的影响,并提出了降低氢含量的合理方法。

Silicon oxynitride is a new kind of thin films. It has excellent photoelectric,mechanic and passivation properties and chemical stability, but the existence of hydrogen as an impurity limits its application. This paper reviewed the activity of hydrogen in silicon oxynitride films and its effects on their properties,and pointed out the rational ways to reduce the content of hydrogen.