摘要
利用"热—力—超声"增量耦合有限元模型,对采用不同引线(金,铜)以及采用铜引线在不同银镀层厚度(48,1,6μm)条件下的键合过程进行了模拟.结果表明,在其它条件不变的情况下,金引线键合过程对硅基板内应力状态的影响远小于铜引线,且应力集中的位置更接近键合中心;随着镀层厚度的增加,基板所受到的压应力逐渐减小,但基板所受到的最大压应力在硅的抗压力范围之内;同时基板所受到的剪应力也逐渐减小,由于剪应力是硅基板损坏的决定性因素,因此采用厚度为16μm的镀层对减小基板损坏更有利.
An incrementally coupled 'thermal-mechanical-ultrasonic'(T-M-U) model was developed to simulate the thermosonic wire bonding process using two types of wires(copper and gold) and three thicknesses of Ag coatings(4,8,16 μm).The results showed that the gold wire was better than copper wire for stress condition in the silicon substrate,and the stress concentration zone for the gold wire was closer to the center than that for the copper wire.In addition,the thicker the Ag coating,the lower the stresses in the silicon substrate.Hence,thicker coating is better for reducing substrate damages.
出处
《焊接学报》
EI
CAS
CSCD
北大核心
2012年第3期13-16,113,共4页
Transactions of The China Welding Institution
基金
国家自然科学基金资助项目(507050495
0628506)
关键词
引线键合
应力状态
有限元法
基板损坏
wire bonding
stress conditions
finite element method
substrate damage
