体硅阳极和薄膜微晶硅阳极聚合物顶发光白光器件

Polymer White Light-Emitting Diodes with p-Type Si Anode and Nanometer-Thick Polycrystalline p-Si Anode

分别以p型体硅和p型薄膜微晶硅为阳极,以掺入MEH-PPV的PFO为发光层,以透明金属Sm/Au为阴极,制作了顶发光白光器件。器件结构是:硅阳极/PEDOT:PSS/MEH-PPV:PFO/Cs2CO3/Sm/Au。通过调节MEH-PPV在PFO中的质量百分比,改进了白光器件的发射色度。当MEH-PPV的质量百分比为0.13%时,发光在白光范围,CIE色坐标为(0.372,0.391)。研究了器件发光效率对体硅阳极电阻率的影响,当体硅阳极电阻率为0.079.cm时,器件电流效率和功率效率都达到极大,分别是0.191 cd/A和0.131 lm/W。以金属Ni诱导硅晶化的薄膜微晶硅为阳极,通过调节Ni层厚度,优化器件效率。当Ni层厚度为2 nm时,薄膜硅阳极器件的电流效率和功率效率分别达到最大值:0.371 cd/A和0.187 lm/W,相对于最佳电阻率体硅阳极器件分别提高了94%和43%。

Polymer white light-emitting diodes （PWLEDs） with p-type Si and nanometer-thick （-10 nm） polycrystalline p-Si anode are reported. The structures of the PWLEDs are Si anodes/ PEDOT：PSS/ MEH-PPV： PFO/CsaCO3/ Sin/ Au. PWLEDs are optimized by adjusting the mixture of MEH-PPV and PFO as the active polymer layer. It is found that when MEH-PPV is 0.13%, the PWLEDs show white emission with CIE coordinates of （0.372, 0.391）. The optimized p-Si anode resistivity of the PWLEDs is investigated. When the resistivity of p-Si is 0.079 I＇~.cm, a maximum currency efficiency of 0.191 cd/A and a power efficiency of 0.131 lm/W are obtained. Furthermore, polycrystalline p-Si anode is optimized by adopting various thickness of the Ni layer, the maximum currency efficiency and power efficiency are raised to 0.371 cd/A and 0.187 lm/W respectively when the thickness of Ni layer is 2 nm. In comparasion with PWLEDs with p-Si anode, the maximum efficiency has raised 94% and 43% respectively.