A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching 被引量：1

A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

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摘要 The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor （MOSFET） under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P＋ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N＋ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional （2D） numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclanlped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET. The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor （MOSFET） under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P＋ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N＋ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional （2D） numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclanlped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.

作者任敏李泽宏邓光敏张灵霞张蒙刘小龙谢加雄张波

机构地区 State Key Laboratory of Electronic Thin Films and Integrated Devices

出处《Chinese Physics B》 SCIE EI CAS CSCD 2012年第4期612-618,共7页 中国物理B（英文版）

基金 supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005) the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2010J038) the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110185120005)

关键词 avalanche current path unclamped inductive switching SUPERJUNCTION MOSFET avalanche current path, unclamped inductive switching, superjunction, MOSFET

分类号 TN386.1 [电子电信—物理电子学] TD633 [矿业工程—矿山机电]

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