Fabrication of 0.3-m T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition

We present an InGaAs metamorphic high electron mobility transistor(mHEMT) grown using Metalorganic Chemical Vapor Deposition(MOCVD) on an n-type silicon substrate with the introduction of an effective multi-stage buffering scheme.Fabrication and performance of a high-frequency 0.3-m gate-length depletion-mode Al 0.50 In 0.50 As/Ga 0.47 In 0.53 As mHEMT is reported for the first time.Using a combined optical and e-beam photolithography technology,submicron mHEMT devices on Si have been achieved.The non-alloyed ohmic contact resistance R c was as low as 0.065-mm.A maximum transconductance up to 761 mS/mm was measured.The unity current gain cut-off frequency(fT) and the maximum oscillation frequency(fmax) were 72.8 and 74.5 GHz,respectively.This device has the highest fT yet reported for a 0.3-m gate-length Si-based mHEMT grown using MOCVD.A high voltage gain,g m /g ds,of 40.6 is observed in the device.

We present an InGaAs metamorphic high electron mobility transistor （mHEMT） grown using Metalorganic Chemical Vapor Deposition （MOCVD） on an n-type silicon substrate with the introduction of an effective multi-stage buffering scheme. Fabrication and performance of a high-frequency 0.3μm gate-length depletion-mode A10.s0In0.s0As/Ga0.47In0.53As mHEMT is re- ported for the first time. Using a combined optical and e-beam photolithography technology, submicron mHEMT devices on Si have been achieved. The non-alloyed ohmic contact resistance Rc was as low as 0.065 Ω-mm. A maximum transconductance up to 761 mS/ram was measured. The unity current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） were 72.8 and 74.5 GHz, respectively. This device has the highest fw yet reported for a 0.3-μm gate-length Si-based mHEMT grown using MOCVD. A high voltage gain, gm/gds, of 40.6 is observed in the device.