摘要
通过高分辨透射电镜分析,深入研究了TeSeIn相变记录薄膜的可逆光存贮机理,提出了对应TeSeIn记录薄膜写入和擦除过程中光致记录畴变化的瞬态相变过程的物理模型。
Based upon TEM analysis, phase change storage mechanism of TeSeln thin film has been studied in detail and a model for writing and erasing process is proposed.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1990年第2期111-114,共4页
Chinese Journal of Lasers
