半导体发光器件的一种新的端面保护和减反射介质膜

A new dielectric facet protector and AR film for semiconductor light-emitting devices

人们早已开始研究半导体发光器件的端面保护和减反射膜,但直至现在成功地用来做保护和减反射膜的只有O、SiO、Al_2O_3和SiN等几种电介质膜。此外,氮化铝(AlN)膜的制备和它的性质及其应用也有所研究。本文报道溅射AlN膜用来做半导体发光器件端面保护和减反射膜的实验研究结果。

Experimental results are presented for the first time for sputtered AIN film which is a protector and AR film on the facet of semiconductor light-emitting devices. The technical conditions for obtaing sputtered AIN film and its properties are given.