摘要
纯ZnO电阻率高,电学性能不稳定,通过掺杂其他元素提高其光电性能,制备出高质量的ZnO薄膜是实现其应用的关键。文章从制备方法、掺杂浓度和退火等方面综述了Sn掺杂ZnO(ZnO:Sn)薄膜光电性能的研究进展,提出了降低ZnO:Sn薄膜电阻率和提高透光率的有效途径。
Pure ZnO film exhibits high resistivity,electrical properties performance instability,thereby,how to enhance its electrical and optical properties by doping is a key for its application.In the paper,the recent progress of the studies on Sn-doped ZnO（ZnO：Sn） thin films based on the factors such as the prepreparation methods,doped concentration,growth conditions and annealing to affect the opto-electrical properties of the films are summarized.The ways to decrease the resistivity and enhance the transmittance of ZnO：Sn thin film are put forward.
出处
《半导体光电》
CAS
CSCD
北大核心
2012年第1期1-6,共6页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(NCFC11074314
50942001)
重庆大学研究生创新基金项目(CDJXS10102207)
重庆大学"211工程"三期创新人才培养计划建设项目(S-09109)
重庆大学大型仪器设备开放基金项目(2010063072
2010121556)
关键词
宽禁带半导体材料
ZnO:Sn薄膜
光学性质
电学性质
wide bandgap semiconductive material
ZnO：Sn film
optical properties
electrical properties
