摘要
根据预失真原理,利用对消的方法,提出一种改进的预失真电路的方案,设计了分别产生三阶和五阶互调分量预失真器电路.最后以Polyfet公司的有记忆效应的功放管设计的功率放大电路为例,分析比较了未加预失真电路的功放性能和加了预失真电路的功放性能,测试结果表明失真分量有了很大的改善,三阶互调系数(IMD3)改善了20.5dB,五阶互调系数(IMD5)改善了3.8dB.IMD3比传统的方案提高了3.2dB,IMD5比传统的方案提高了5.8dB.
According to the predistortion theory and cancellation method,an improved program of predistortion circuit is put forward,which includes the third-order and the fifth-order intermodulation-component′s predistortion circuit.Finally,take the power amplifier device of Polyfet company′s memory effect as an example,analyzing and comparing the power′s performance between unpredistortion circuit and predistortion circuit,which tests the improvement level of distortion′s component.The third-order intermodulation-supression is improved 20.5 dB.Meanwhile,the fifth-order intermodulation-supression is improved 3.8 dB.The third-order intermodulation-supression is improved 3.2 dB than conventional scheme.the fifth-order intermodulation-supression is improved 5.8 dB than conventional scheme.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
2012年第2期179-184,共6页
Journal of Xiamen University：Natural Science
基金
国家自然科学基金项目(60803078)
福建省教育厅科技项目(JB11096)
关键词
峰均比
预失真
互调失真
记忆效应
peak-to-average power ratio
predistortion
intermodulation distortion
memory effect
