室温下金属铝膜的霍尔效应初步研究

Preliminary study of the Hall effect of aluminum metal films at room temperature

采用真空蒸发镀膜法制备了金属铝薄膜,在室温下,用四探针法测量了样品的电阻率和霍尔系数。结果表明,制成的金属铝膜,电阻率由块体材料的10-8Ω.m增大到薄膜样品的10-5Ω.m;霍尔系数由块体材料的10-11m3/C数量级左右增大到10-4m3/C数量级;电阻率和霍尔系数随着金属铝膜厚度的减小而逐渐增大。

Aluminum metal films with thickness close to the nanometer scale have been fabricated by a vacuum evaporation coating method. The resistivity and Hall coefficient of the aluminum metal films were measured by the four-probe method. The resistivity of the sample increased from 10^-8Ω·m for the aluminum bulk metal to 10^-5Ω·m/C for the films, and the Hall coefficient increased from 10^-11m^3/C for the aluminum bulk metal to 10^-4m^3/C for the films. Higher resistivity and Hall coefficient were obtained by reducing the thickness of the aluminum metal film.