钒离子注入硅合成硅化钒薄层

Synthesis of thin layer V silicides by means of V implantation

用大束流密度的钒金属离子注入硅 ,能够直接合成性能良好的薄层硅化物 随束流密度的增加 ,硅化钒相生长 ,薄层硅化物的方块电阻RS 明显下降 ,当束流密度为 2 5 μA/cm2 时 ,Rs 达到最小值 2 2Ω/□ ,说明连续的硅化物已经形成。X衍射分析表明 ,注入层中形成了V3 Si、V5 Si3 、V3 Si5 和VSi2 四种硅化钒。经过退火后 ,Rs 明显地下降 ,Rs 最小可降到 9Ω/□ ,电阻率可小到 72 μΩm ,说明硅化钒薄层质量得到了进一步的改善 ,大束流密度注入和退火后 ,硅化钒相进一步生长。大束流密度注入和高温退火 ( 1 2 0 0℃ )仍然具有很低的薄层电阻率 ,这充分说明硅化钒具很好的热稳定性。透射电子微镜观察表明 ,连续硅化钒薄层厚度为 80nm。

The good properties of V silicides were synthesized by using metal V ion implantation with large ion flux.It was found that the V silicides grown up and sheet resistance R s decreased with increasing ion flux.The R s minimum of 22Ω/□ was obtained when the ion flux of 25μA/cm 2 was used,which indicated that continuous layer of V silicides were formed.X?ray diffraction analysis shows that four kinds of V silicides of V 3Si,V 5Si 3,V 3Si 5 and VSi 2 were formed in V implanted silicon.The quality of the silicides was improved further after annealing.If the sample was annealed at 1050℃ for 20s,the R s decreased to 9Ω/□,the resistivity is 72μΩ.m.It can be seen from TEM observation that depth of continuous layer of V silicides is about 80nm.