摘要
对掩模 硅片同轴对准系统中影响对准精度的诸因素进行了理论分析 ,阐述了误差形成机理及相应的对策 ,以理论分析指导精度实验取得了± 0 0 6 μm( 3σ)对准精度。
Factors influencing alignment accuracy in coaxial alignment system of mask and wafer are analyzed theoretically . The causes of errors and measures reducing them are described. On the basis of this analysis, we get the alignment accuracy as high as ±0 06μm(3σ) in experiments.
出处
《微细加工技术》
EI
2000年第1期45-50,共6页
Microfabrication Technology
基金
中国科学院"九五"院重大项目"0 35μm投影光刻关键单元技术研究"分课题