摘要
研究了在硅上P型异质外延金刚石膜的磁阻效应。实验结果表明金刚石膜有显著的磁阻反应 ,并与磁阻器件的结构有关。在室温下圆盘形结构的磁阻相对变化在 5T磁场下约为 0 85 ,而长条形结构只有 0 40。
The magnetoresistive effect of p type heteroepitaxial diamond films on Si substrate has been investigated. The experimental results showed that a notable maganetoresistive effet in the films was observed, and closely depended on the geometric form of the devices. The relative changes in the maganetoresistance of the heteroepitaxial diamond films with the disk structure were about 0.85 at room tenperature under magnetic field intensity of 5T, but only 0.40 for rectangle structure at the same conditions.
出处
《微细加工技术》
EI
2000年第1期75-78,共4页
Microfabrication Technology
