摘要
在3μm工艺条件下开发了一套实用的互补双极工艺(CB)。利用此工艺制造出特征频率分别为3.2GHz和1.6GHz的高性能NPN与PNP管,并成功地集成在压摆率高达2200V/μs的高速运算放大器芯片中。
A practical 3 μm complementary bipolar process has been developed.With this technology,high performance npn and pnp transistors with an f T of 3.2 GHz and 1 6 GHz,respectively,are fabricated,which are integrated into high speed operational amplifier ICs with a swing rate of 2200 V/μs.The process experiment is described,and the results are discussed.
出处
《微电子学》
CAS
CSCD
北大核心
2000年第1期66-68,共3页
Microelectronics
关键词
互补双极工艺
集成电路
运算放大器
Bipolar process
Complementary bipolar process
Semiconductor manufacturing
Semiconductor device
Operational amplifier
