摘要
采用传统氧化物陶瓷工艺制备了掺杂MnO2(摩尔分数0～1.5%)的ZnO-Pr6O11-Co2O3-Cr2O3(ZnPrCoCrO)基压敏陶瓷。利用XRD、SEM及I-V特性测试等表征了所制陶瓷的微观结构和电学特性。结果表明:1 350℃下烧结1 h所制掺杂0.5%MnO2的ZnPrCoCrO陶瓷具有最佳的高压压敏性能:相对密度为99%、非线性系数为110、压敏电压强度为2 840 V/mm、漏电流密度为11.4×10–6A/cm2。
ZnO-Pr6O11-CO2O3-Cr203（ZnPrCoCrO） based varistor ceramics doped with 0-1.5% （mole fraction） MnO2 were prepared by traditional ceramic process. The microstructure and I-V characteristics of these ceramics were examined by XRD, SEM and Ⅰ-Ⅴ tests. The results show that the ceramic doped with 0.5%（mole fraction） MnO2 sintered at 1 350 ℃ for 1 h exhibits the optimum high-voltage properties with a relative density of 99%, a nonlinear coefficient of 110, a breakdown voltage strength of 2 840 V/mm and a leakage current density of 11.4 × 10^-6 A/cm^2.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2012年第4期10-12,共3页
Electronic Components And Materials
基金
内蒙古自然科学基金资助项目(No.20080404MS0804)
