发光二极管辐射模型的快速建立与验证

Quickly Modeling of Light Emitting Diode Radiation Pattern and Certifying

基于Source Property Generator软件,根据配光曲线图快速获得相应的光源数据,提出运用非线性回归分析阻尼最小二乘(L-M)法,由模拟公式得到的光源数据与由配光曲线(或测量)获得的光源数据之间的误差,以寻求模拟公式参数的变化步长;然后,由误差均方根与归一化互相关两个判断标准来重建辐射模型的精确性.结果显示:误差均方根低于1%,归一化互相关接近100%.该方法只需提供光源的配光曲线图即可以获得相应的光强分布函数和辐射模型,如果前面的函数设置没有出现错误,一般只要一次就能通过验证;而且只要改变某些要求参数,即可便捷地设计出一系列同类型透镜的辐射模型函数.

According to the angular intensity distribution, light emitting diode （LED） intensity datasheets are obtained by using Source Property Generator software. This paper firstly offers the way using nonlinear regression Levenberg- Marquart method which seeks corresponding mutative step length of the parameter of simulating equation, according to the error between the intensity value of simulating equation and Measurement, and changes it. Meanwhile, using two es- timation criterion, namely, root mean square （RMS） and normalized cross correlation （NCC）, rebuild the accuracy of LED radiation pattern. Results show that RMS is less than 1%, NCC is near 100%. Only providing the map of LED source＇s the angular intensity distribution can gain corresponding intensity distribution equation and radiation pattern im- mediately, if there is not any wrong in function setting. Most important point is that a series of similar types of LENs＇ Radiation Pattern equations can be obtained by changing some parameters which need to be solved.