摘要
本文单粒子效应的研究目的,旨在研究异质结器件InAs/AlSb HEMTs在重离子辐照下失效的概率。文中研究了InAs/AlSb HEMTs的I-V特性对沿45度方向入射、线性能量传输因子0.2,作用时间0.1ps,重离子轨迹0.1um的重离子辐照的响应规律。结果表明:随着栅极偏压由负到正的改变,InAs/AlSb HEMTs器件由不能工作到能够正常工作,所以在重离子辐射条件下栅极偏压影响着InAs/AlSb HEMTs器件能否正常工作。
We use heavy ion in the direction of 45 degree to penetrates the InAs/AlSb HEMTs ,Defines the linear energy transfer by 0.2, the time [0.1ps] at which the ion penetrates the device, the length 1 is 0.1urn,analyse the effect that heavy ion penetrates the device with I-V characteristic curve. With the gate bias change from minus to positive ,whether the InAs/AlSb HEMTs can work or not.so bias gate effect whether the InAs/AlSb HEMTs can work or not in the condition of heavy ion.
出处
《科技信息》
2012年第7期78-79,共2页
Science & Technology Information
