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深槽LIP太阳能电池栅线电极技术 被引量：2

Technology of High Aspect Ratio on Silicon Solar Cell Grid by LIP
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摘要 介绍了深槽LIP太阳能电池栅线电极的制造方法,对LIP工艺及装置进行了详细的说明。通过试验表明,用新工艺制造的太阳能电池片的转换效率可达19.4%。讨论了与传统工艺相比较,深槽LIP太阳能电池片在光学和电学性能上的提升机理。 Introduce a method for high aspect ratio on silicon solar cell grid structure by light-induced plating process （LIP）. Explicate the technology of LIP in detail., efficiency of silicon solar cell is increased up to 19.4% with the new process through the test. The principle is discussed on optical and electrical capabilities of solar cells by LIP comparing with the traditional process.
作者 欧萌 赵晓明
机构地区 中国电子科技集团公司第二研究所
出处 《电子工艺技术》 2012年第2期102-105,共4页 Electronics Process Technology
基金 电子发展基金项目(2009) 山西省科技创新项目(2010)
关键词 LIP 埋栅电极 太阳能电池 LIP Grid electrode Solar cell
分类号 TM914 [电气工程—电力电子与电力传动]
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参考文献5

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二级参考文献19

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电子工艺技术
2012年 第2期

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