PECVD法生长氮化硅薄膜及其微结构梁特性的研究

Study of Thin films of Silicon Nitride Deposited by PECVD and Beam Properties

采用化学气相沉积法(PECVD)在石英基片上制备氮化硅薄膜,应用MEMS工艺将氮化硅薄膜制作成双端固定的微结构梁,纳米压痕仪测量氮化硅薄膜的杨氏模量表明其值在136～172 Gpa之间,用曲率半径法测试薄膜的残余应力,并对微结构梁的弹性系数进行计算,结果表明弹性系数值在11.4～57 N/m.之间,根据实验所得弹性系数对微结构梁的驱动电压进行计算,其驱动电压在32.8～73V之间,微结构梁的实际驱动电压测得为34～60V。

The thin films of silicon nitride were prepared on the quartz substrate by PECVD. The fixed - fixed nitride beams were fabricated using MEMS process. The nanoindentation measurement showed that Yang＇ s modules of nitride thin film was 136 - 172Gpa. The residual stress was obtained by wafer - curvature measurement method to evaluate the spring constant of nitride beam. The spring constant of the beam was ranging from 11.4 to 57 N/m. The actuated voltage was derived from 32.8 to 73V according to the spring constant. The actuated voltage of the beam was measured from 34 to 60V.