I-Line光刻胶材料的研究进展

Evolution and Progress of I-Line Photoresist Materials

酚醛树脂-重氮萘醌正型光刻胶由于其优异的光刻性能,在g-line(436nm)、i-line(365nm)光刻中被广泛使用.g-line光刻胶胶、i-line光刻胶,两者虽然都是用线型酚醛树脂做成膜树脂,重氮萘醌型酯化物作感光剂,但当曝光波长从g-line发展到i-line时,为适应对应的曝光波长以及对高分辨率的追求,酚醛树脂及感光剂的微观结构均有变化.在i-line光刻胶中,酚醛树脂的邻-邻′相连程度高,感光剂酯化度高,重氮萘醌基团间的间距远.溶解促进剂是i-line光刻胶的一个重要组分,本文对其也进行了介绍.

Novolak-diazonaphthoquinone photoresists have been widely used in g-line, i-line lithography for its high performance. Although g-line and i-line photoresists are both consisted of novolak resin and diazonaphthoquinone photoactive compounds, in order to fit i-line exposure wavelength and seeking for higher resolution, novolak resin and photoactive compounds（PAC） both have difference in structure from g-line to i-line. In i-line resist, the o-o＇bonding content of resin is higher, the esterfication of PAC is higher, the proximity of DNQ groups is distant. Dissolution promoter is an important component of i-line resists, some phenolic additives were very useful to control the dissolution behavior.