摘要
利用离子束溅射沉积的方式在Al2O3陶瓷基片表面制备了In2O3薄膜,并分别研究了热处理温度对薄膜相结构、电阻-温度特性及气敏特性的影响。结果表明:薄膜相结构受热处理温度影响显著,热处理温度高于600℃时,薄膜相结构由无定形状态变为立方相状态;随着热处理温度的升高,薄膜电阻率显著增大;薄膜对CO气体具有良好的气敏特性,热处理温度为600℃时,薄膜对CO气体灵敏度达到最大值。
In2O3 beam sputtering. film is deposited on Al2O3 substrate by ion The influence of heat treatment temperature on phase structure, resistance-temperature characteristics and gas sensitive effect is studied. The main conclusions obtained are summarized as follows: phase structure of In2O3 film is influenced by heat treatment temperature obviously and is cubic when the heat treatment temperature is above 600℃. Resistivity of In2O3 film augments with heat treatment temperature hoisting. Sensitivity of In2O3 film for CO is obvious. In2O3 film heat-treated on 600℃ shows the optimum gas sensitivity for CO.
出处
《传感器世界》
2012年第3期6-9,共4页
Sensor World
关键词
相结构
电阻-温度特性
气敏特性
phase structure
resistance-temperature characteristic
gas sensitive effect