短脉冲激光对硅基探测器的热作用模型选择

Selection of heat transfer model for describing short-pulse laser heating silica-based sensor

从傅里叶模型和非傅里叶模型的基本方程出发,通过有限差分方法对方程进行数值求解。分别分析了10,1.0,0.1,0.01ns这4种脉宽的脉冲激光作用于硅材料时两种传热模型温度曲线的相对变化;讨论了热弛豫时间对非傅里叶模型数值结果的影响。结果表明:脉宽小于或等于100ps的激光作用于硅材料时,表层温度上升缓慢,会发生载流子效应,非傅里叶模型可以合理地反映这种现象;对于一般材料,载流子效应发生的条件是脉宽小于或等于材料热弛豫时间,此时应当用非傅里叶模型描述加热过程。

The fundamental equations of Fourier heat transfer model and non-Fourier heat transfer model were numerically solved, with the finite difference method. The relative changes between temperature curves of the two heat transfer models were analyzed under laser irradiation with different pulse widths of 10 ns, 1 ns, 100 ps, 10 ps. The impact of different thermal relaxa- tion time on non-Fourier model results was discussed. For pulses of pulse width less than or equal to 100 ps irradiating silicon ma- terial, the surface temperature increases slowly and carrier effect happens, which the non-Fourier model can reflect properly. As for general material, when the pulse width is less than or equal to the thermal relaxation time of material, carrier effect occurs. In