摘要
基于独特结构和物理特性的两类高性能新型高压半导体开关漂移阶跃恢复二极管和快速离化开关,提出一种新型高功率高压纳秒电磁脉冲产生方法,其技术路径是通过高压漂移阶跃恢复二极管开关将高贮能电感能量向高压快速离化开关及负载转移,产生高功率、高重复频率纳秒电磁脉冲,并用实验验证该方法在高重复频率(120,200,300kHz)下产生高功率、高重复频率纳秒脉冲的有效性,输出脉冲电压分别为1.62,1.41,1.36kV。
According to the particular structures and working principles of high voltage semiconductor switches, drift step recovery diodes and fast ionization devices, a high pulse repetition frequency（PRF） and high voltage nanosecond electromagnetic pulse generation method is provided. The technology path is to transmit the high energy of storage inductance on the FID and load through the DSRD. The feasibility of the method is tested and verified by experiments under input trigger PRFs as high as 120, 200 and 300 kHz, and the output pulse voltages are 1.62, 1.41 and 1.36 kV, respectively.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2012年第2期497-500,共4页
High Power Laser and Particle Beams
基金
国家高技术发展计划项目
关键词
半导体开关
高压脉冲
高重复频率
电磁脉冲产生
semiconductor switch
high voltage pulse
high pulse repetition frequency
electromagnetic pulse genera-tion
